Memory array decoder

ABSTRACT

An apparatus and method for selecting a storage location in a memory device including receiving at least one of a pre-decoded location address signal, a match signal, and a redundant location address enable signal, enabling one of a decoder and a redundant decoder in response to the match signal, wherein the decoder is operable to generate a location select signal for selecting a first location, the decoder being responsive to the pre-decoded location address signal, and wherein the redundant decoder is operable to generate a redundant location select signal for selecting a second location, the redundant decoder being responsive to the redundant location address enable signal, and terminating one of the generation of a location select signal and the generation of a redundant location select signal in response to a precharge signal.

BACKGROUND

The present invention relates generally to a memory array addressdecoder and more particularly to a memory array address decoder used bya dynamic random access memory device.

A typical DRAM memory device is comprised of a plurality of memorycells, each comprised of a transistor and a capacitor. Each memory cellstores one bit of data in the form of a voltage. A high voltage level(e.g., 3V) represents a logic “1”, whereas a low voltage level (e.g.,0V) represents a logic “0”. The DRAM may also include peripheraldevices, such as drivers, sense amps, input/output devices, and powersupplies, etc., that are used to identify memory cells, access thememory cells, and store information within and read information from thememory cells, among others.

The memory cells may be arranged in an array with each memory cell beingconnected to a wordline and a digitline. Each memory cell has a uniqueaddress. Typically, the DRAM's control logic receives commands (e.g.,read, write, etc.) and address information from a memory systemcontroller. The address information is decoded by row and columndecoders and the specific memory cell for which the command is directedis identified and the command executed.

Most DRAMs have built-in redundancy. Thus, should a memory cell becomeinoperable, a redundant memory cell can be assigned to logically takeits place. For DRAMs incorporating redundancy, address information issent to a comparator circuit. If the address information corresponds toan inoperable memory cell, a match signal is generated which substitutesthe memory address of a redundant cell for that of the inoperable memorycell. The generation of the match signal, however, limits the speed ofthe DRAM because the other circuitry within the device must wait for thematch signal to be generated.

The address information supplied to the row and column decoders can beeither “true and complement” or pre-decoded as is known in the art.Pre-decoded address lines, for example, may be formed by logicallycombining (i.e., using one or more AND logic gates) true and complementaddresses. Pre-decoded addressing requires less power than true andcomplement addressing because fewer signals need to make transitionsduring address changes. Additionally, pre-decoded addressing has ahigher efficiency than true and complement addressing because fewertransitions are required to decode the same number of addresses.

Typical prior art decoders are classified as static or dynamic. FIG. 8is a schematic of a static column decoder 80 according to the prior art.The static column decoder 80 includes NOR gate 81, NAND gates 82 and 84,and inverters 83 and 85. Pre-decoded address signals CA345 i<0> andCA67Ei<0> are input into NOR gate 81 (where the “i” indicates that thesignal is active low). The output of NOR gate 81 is fed to an input ofNAND gate 82 and to an input of NAND gate 84. The pre-decoded addresssignal CA012<1> is provided to another input of NAND gate 82, whereasthe pre-decoded address signal CA012<0> is provided to another input ofNAND gate 84. The output of NAND gate 82 is fed to the input of inverter83, which outputs the column select signal CSEL<1>. The output of NANDgate 84 is fed to the input of inverter 85, which outputs the columnselect signal CSEL<0>.

The static column decoder 80, although simple to implement, has severaldeficiencies. First, different gate delays are created for each columnselect line because the static column decoder 80 uses CMOS gates.Although originally tolerable, the differing gate delays create problemsfor today's DRAMs which operate at increased speeds. Second, the staticcolumn decoder 80 requires that the turn-on period and turn-off periodof a match signal, for example generated when the originally addressedcell is found to be inoperable, be equal (i.e., the rise and fall timesof the match signal must be the same). Thus, the cycle time for a staticcolumn decoder 80 is adversely affected.

FIG. 9 is a schematic of a dynamic column decoder 90 according to theprior art. The dynamic column decoder 90 includes several p-mostransistors (M2, M4, M6), several n-mos transistors (M1, M3, M5, M7),and several inverters (91–96). Typically, the dynamic column decoder isoperated by first applying a precharge signal to the gates oftransistors M3 and M7, thus pulling nodes 98 and 99, respectively, toground. The precharge signal is then removed from the gates oftransistors M3 and M7. Inverter 91 is used to latch node 98 at ground(thus, preventing node 98 from floating when the precharge signal isremoved from the gate of transistor M3). Likewise, inverter 94 is usedto latch node 99 at ground (thus, preventing node 99 from floating whenthe precharge signal is removed from the gate of transistor M7).

After the precharge signal is removed, the pre-decoded address signalsCA012 i<1>, CA012 i<0>, CA345 i<0>, and CA67E<0> are applied to thedynamic column decoder 90. The state of each of the output signalsCSEL<1> and CSEL<0> is dependent upon these pre-decoded signals asshould be apparent to one skilled in the art.

One advantage of the dynamic column decoder 90 over the static columndecoder 80 is that the dynamic column decoder has consistent gatedelays. Thus, the column select output lines (i.e., signals CSEL<1> andCSEL<0>) have consistent on/off times. The dynamic column decoder 90,however, has several deficiencies. For example, the feedback inverters91, 94 must be sized large enough to keep the nodes 98 and 99,respectively, from floating (i.e., must keep the nodes 98 and 99 atground potential, set when the precharge signal goes active), but sizedsmall enough to be easily overridden when the pre-decoded addresssignals CA012 i, CA345 i, and CA67E go active. Additionally, thepre-decoded address signals CA012 i, CA345 i, and CA67E cannot go activeuntil the precharge signal goes inactive, else the pre-decoded addresssignals overlap and fight the precharge signal. If the precharge andpre-decoded address signals CA012 i, CA345 i, and CA67E overlap, theturn on timing of the dynamic column decoder is adversely affected.Thus, the precharge signal consumes a relatively large amount of thecycle time which is available for providing the column select signals.

Thus, there exists a need for an improved memory array decoder that hasa consistent turn-on time, that can utilize a precharge signal withoutadversely affecting the cycle time, and which overcomes the otherlimitations inherent in prior art.

SUMMARY

One aspect of the invention relates to a method for selecting a storagelocation in a memory device. The method comprises receiving at least oneof a pre-decoded location address signal, a match signal, and aredundant location address enable signal, enabling one of a decoder anda redundant decoder in response to the match signal, wherein the decoderis operable to generate a location select signal for selecting a firstlocation, the decoder being responsive to the pre-decoded locationaddress signal, and wherein the redundant decoder is operable togenerate a redundant location select signal for selecting a secondlocation, the redundant decoder being responsive to the redundantlocation address enable signal, and terminating one of the generation ofa location select signal and the generation of a redundant locationselect signal in response to a precharge signal.

Another aspect of the invention relates to a method for selecting astorage location in a memory device comprising enabling a decoder inresponse to at least one of an address signal and a match signal,generating a location select signal with the enabled decoder, andterminating the generating of the location select signal in response tothe address signal and a precharge signal.

Another aspect of the invention relates to a method for accessing amemory location. The method comprises enabling one of a decoder circuitand a redundant decoder circuit in response to at least one of apre-decoded address signal, a redundant column select enable signal, anda match signal, generating one of a column select signal with theenabled decoder circuit and a redundant column select signal with theenabled redundant decoder circuit, and terminating the generating of oneof the column select signal and the redundant column select signal inresponse to a precharge signal and at least one of the pre-decodedaddress signal and the redundant column select enable signal.

Another aspect of the invention relates to a decoder, comprising aninput for receiving a first signal, a first node connected to the inputvia an enabling device which is responsive to a second signal, aplurality of inverters for generating a location select signal inresponse to the first and second signals, and a feedback loop responsiveto the location select signal, the feedback loop supplying at least oneof a precharge signal and a latch signal to the first node.

Another aspect of the invention relates to a column address circuit fora memory device comprising a command decode circuit operable to generatea precharge signal, an address trap circuit responsive to the commanddecode circuit to convert an address signal into a column addresssignal, a redundancy compare circuit responsive to the command decodecircuit and the address trap circuit to generate a match signal and aredundant column select enable signal, an address pre-decode circuitresponsive to the command decode circuit, the address trap circuit, andthe redundancy compare circuit to generate a pre-decoded column addresssignal in response to the column address signal, and a decoder circuitoperable to generate at least one of a column select signal in responseto the pre-decoded column address signal and a redundant column selectsignal in response to the redundant column select enable signal, thedecoder circuit further responsive to the precharge signal to terminatethe generation of one of the column select signal and the redundantcolumn select signal.

Another aspect of the invention relates to a memory device comprising amemory array having a plurality of memory cells, a plurality ofwordlines and a plurality of digitlines, wherein the memory cells areaccessible by the wordlines and the digitlines, and a plurality ofperipheral devices for reading data out of and writing data into thememory array. The peripheral devices comprise a digitline driver foractivating at least one of the digitlines, the digitline driverresponsive to a decoder output signal, and a decoder for providing thedecoder output signal, wherein the decoder comprises an input forreceiving a first signal, a first node connected to the input via anenabling device which is responsive to a second signal, a plurality ofinverters for generating the decoder output signal in response to thefirst and second signals, and a feedback loop responsive to the decoderoutput signal, the feedback loop supplying at least one of a prechargesignal and a latch signal to the first node.

BRIEF DESCRIPTION OF THE DRAWINGS

To enable the present invention to be easily understood and readilypracticed, the present invention will now be described for purposes ofillustration and not limitation, in connection with the followingfigures wherein:

FIG. 1 is a simplified block diagram of a memory system according to oneembodiment.

FIG. 2 illustrates a simplified functional block diagram of anarchitecture for the memory device of FIG. 1 according to oneembodiment.

FIG. 3 is a simplified schematic of one bank of the memory array of FIG.2.

FIG. 4 is a simplified schematic of a plurality of peripheral devicesthat may be used with the memory device of FIG. 3.

FIG. 5A is a schematic of an column decoder circuit according to oneembodiment.

FIG. 5B is a schematic of a redundant column decoder circuit accordingto one embodiment.

FIG. 6A is a simplified schematic of a column address circuitincorporating the column decoder circuit of FIG. 5A and the redundantcolumn decoder circuit of FIG. 5B according to one embodiment.

FIG. 6B is a table illustrating an address pre-decode scheme for columnaddress signal according to one embodiment.

FIGS. 6C–6E illustrate exemplary the internal components of theredundancy compare circuit as shown in FIG. 6A according to oneembodiment.

FIG. 7 illustrates a timing diagram of the column address circuit ofFIG. 6A according to one embodiment.

FIG. 8 is a schematic of a static array decoder according to the priorart.

FIG. 9 is a schematic of a dynamic array decoder according to the priorart.

DETAILED DESCRIPTION

FIG. 1 is a simplified block diagram of a memory system 2 according toone embodiment. The memory system 2 includes a memory controller 8 and asynchronous dynamic random access memory (SDRAM) 10. The use of an SDRAMis for exemplary purposes only and is not intended, in any manner, tolimit the scope of the present invention. It should be apparent to thoseskilled in the art that other types of memory devices may be used whileremaining within the scope of the present invention. For example, apsuedo-static dynamic random access memory (PSDRAM), a double data ratedynamic random access memory (DDR DRAM), an extended data out dynamicrandom access memory (EDO DRAM), etc. may be used.

Additionally, it should be apparent to those skilled in the art that thememory system 2 may include other components while remaining within thescope of the present invention. For example, memory system 2 may includea microprocessor, micro-controller, ASIC, etc. which is in communicationwith the memory controller 8 and the synchronous dynamic random accessmemory (SDRAM) 10.

The memory controller 8 and SDRAM 10 communicate via a system bus 4. Inthe current embodiment, the system bus 4 carries command signals,address signals, and data signals, among others. The system bus 4 may besub-divided into two or more buses, for example a command bus 12 (notshown in FIG. 1), an address bus 16 (not shown in FIG. 1), and a databus 37 (not shown in FIG. 1). The command bus may carry the row addressstrobe (RAS#), column address strobe (CAS#), and write enable (WE#)command signals, among others. The address bus may carry bank address(BA0, BA1) and address input (A0–A12) signals, among others. The databus may carry data input/output signals (DQ0–DQ15), data strobe signals(LDQS, LDQS#, UDQS, UDQS#), and data mask signals (LDM, UDM), amongothers. Additionally, some command signals, such as the chip select(CS#), clock enable (CKE), and on-die termination (ODT) signals may becarried by another portion of the system bus 4. It should be apparent toone skilled in the art that the topology of the system bus 4 (and itscomponent parts) may be varied while remaining within the scope of thepresent invention. It should further be apparent to one skilled in theart that the illustrated signals are for exemplary purposes only and notintended to limit the present invention in any manner.

FIG. 2 illustrates a simplified functional block diagram of anarchitecture for the SDRAM 10 of FIG. 1 according to one embodiment. TheSDRAM 10 includes a control logic 11 responsive to a plurality ofcommand signals (e.g., CS#, RAS#, CAS#, WE#, CKE, CK, CK#, ADR, BA,etc.) from a command bus 12. The control logic 11 includes a commanddecode circuit 13 and mode register circuits 14, among others. Table 1illustrates a truth table for the command coding of the SDRAM 10according to the current embodiment.

TABLE 1 SDRAM Coding Truth Table (L = 0, active; H = 1, inactive). CKEPrevious Current FUNCTION Cycle Cycle CS# RAS# CAS# WE# Write H H L H LL Read H H L H L H Bank Activate H H L L H H Load Mode H H L L L LRefresh H H L L L H Self-Refresh H L L L L H Entry Self-Refresh Exit L HH X X X L H H H Precharge H H L L H L No Operation H X L H H HReferring to Table 1 for example, when the memory controller 8 setsCS#=L, RAS#=H, CAS#=L and WE#=L, the command decode circuit 13 decodesthe signals as a write command function. It should be apparent to thoseskilled in the art that different and/or additional signals (e.g., BA,ADR, etc.) may be used to encode each command function. It shouldfurther be apparent to one skilled in the art that the specific state ofeach command signal (i.e., CS#, RAS#, etc.) used to define each commandfunction (i.e., write, read, etc.) may be altered while remaining withinthe scope of the present invention.

The SDRAM 10 also includes an address register 15 responsive to anaddress bus 16 which carries a plurality of address signals (e.g.,A0–A12, BA0, BA1, etc.). The control logic 11 and the address register15 communicate with each other, and with a row address multiplexercircuit 17, a bank control logic circuit 18, and a column addresscounter/latch circuit 19, via an internal bus 20.

The bank control logic 18 is responsive to the control logic 11, theaddress register 15, and a refresh counter 38. The row addressmultiplexer 17 is also responsive to the control logic 11, the addressregister 15, and the refresh counter 38. A series of row latch/decoders21 are responsive to the bank control logic 18 and the row addressmultiplexer 17. One row latch/decoder 21 is provided for each memoryarray 22. Each memory array 22 is comprised of a plurality of memorycells each operable to store one bit of information. Four memory arrays22, labeled bank 0 through bank 3, are illustrated in FIG. 2.Accordingly, there are four row latch/decoder circuits 21, one each forcontrolling bank 0 through bank 3.

The column address counter/latch circuit 19 is responsive to the controllogic 11 and the address register 15. A series of column decoders 23 areresponsive to the bank control logic 18 and the column addresscounter/latch 19. One column decoder 23 is provided for each memoryarray 22. As discussed above, SDRAM 10 includes four memory arrays 22labeled bank 0 through bank 3. Accordingly, there are four columndecoder circuits 23, one each for controlling bank 0 through bank 3. AnI/O gating circuit 24 is responsive to the column decoder circuits 23for controlling sense amplifiers 25 within each of the memory arrays 22.

The SDRAM 10 may be accessed through a plurality of data pads 25 foreither a write operation or a read operation. For a write operation,data on data pads 25 is received by receivers 26 and passed to inputregisters 27. A write buffer/driver circuit 28 buffers the received datawhich is then input to the memory arrays 22 through the I/O gatingcircuit 24.

Data which is to be read from the memory arrays 22 is output through theI/O gating circuit 24 to a read latch 29. From the read latch 29, theinformation is input to a multiplexer circuit 30 which outputs the dataonto the data pads 25 through drivers 31. The drivers 31 are responsiveto a data strobe generator 32 and to a delay locked loop circuit 33. Thedata strobe generator 32 is operable to produce data strobes for upperand lower bytes (i.e., UDQS, UDQS#, LDQS, and LDQS#) as is known in theart. The data strobes are also provided to data strobe output pads 34,input registers 27, and to the write buffer/driver 28, among others. TheSDRAM 10 also includes input data mask pads 35 for receiving upper datamask signals (UDM) and lower data mask signals (LDM) for the upper bytes(DQ8–DQ15) and lower bytes (DQ0–DQ7), respectively. The data pads 25,data strobe output pads 34, and data mask pads 35 may be part of a databus 37.

The SDRAM 10 includes an on-die termination (ODT) circuit 36 which isoperable to apply an effective resistance Rtt (e.g., R1 or R2) to thedata pads 25, data strobe output pads 34, and input data mask pads 35(or to another portion of the data bus). The memory controller 8 mayissue an ODT control signal for enabling/disabling the ODT circuit 36.Those of ordinary skill in the art with recognize that the diagram ofFIG. 2 has been simplified so as to focus on those elements which arehelpful to understand the present invention while eliminating otherelements not needed to understand the present invention.

FIG. 3 is a simplified schematic of one bank of the memory array 22 ofFIG. 2. The memory array 22, as illustrated, may be referred to as afolded digitline array, however, it should be apparent to those skilledin the art that other DRAM architectures (for example, an open digitlineDRAM memory array) may be used while remaining within the scope of thepresent invention.

The array 22 is comprised of a plurality of memory cells or memory bits(mbit) 41, each of which includes a mbit transistor 42 and a storagecapacitor 43. The mbits 41 are capable of holding binary information inthe form of stored charge on their capacitors 43. The mbit transistors42 operate as a switch interposed between the mbit capacitors 43 andtheir associated digitlines (e.g., D0, D0*, D1, D1*). The mbittransistors 42 are operated (i.e., activated/deactivated) using signalssupplied on an associated wordline (e.g., WL0, WL1, WL2, WL3) viawordline drivers 45.

Accessing an mbit 41 results in charge sharing between the accessed mbitcapacitor 43 and its corresponding digitline (e.g., D0, D0*, D1, D1*).If the accessed mbit capacitor 43 contains a stored logic one (e.g.,Vcc), the charge between the capacitor and the digitline causes thevoltage on the corresponding digitline (e.g., D0, D0*, D1, D1*) toincrease. If the accessed mbit capacitor 43 contains a stored logic zero(e.g., 0V), the charge sharing causes the voltage on the correspondingdigitline (e.g., D0, D0*, D1, D1*) to decrease. This is true because thedigitlines are precharged to Vcc/2 prior to the array access operation.It should be apparent to one skilled in the art that the size of thearray 22 illustrated in FIG. 3 (i.e., with eight mbits 41, fourwordlines WL0, WL1, WL2, WL3, and four digitlines (D0, D0*, D1, D1*) isused for exemplary purposes and that arrays having a different size andlayout are within the scope of the present invention.

The digitlines (D0, D0*, D1, D1*) may be grouped into digitline pairs(D0–D0*, D1–D1*) and connected to peripheral devices 46. The peripheraldevices 46 may be used, for example, to determine whether the chargestored in the accessed mbit 41 was a logic one or a logic zero. FIG. 4is a simplified schematic illustrating some of the peripheral devices 46that may be used with the array 22 of FIG. 3. The peripheral devicesinclude an equalization circuit 60, isolations transistors (61 a, 61 b),a p-sense amplifier 62, an input/output (I/O) circuit 63, and an n-senseamplifier 64, each of which spans the digitline pair D0–D0*.

The equalization circuit 60 is responsive to an equalization signal (EQ)and is operable to drive the digitlines D0 and D0* to a common voltagepotential. The isolation transistors (61 a, 61B) are responsive to anisolation signal (ISO*) and are operable to isolate the array 22 fromone or more of the peripheral devices and from other arrays that may beconnected to the digitlines D0 and D0*. The p-sense amplifier 62(responsive to activation signal ACT) and the n-sense amplifier 64(responsive to n-latch signal NLAT*) are operable to sense the chargestored within the mbit 41 that is accessed by the wordline driver 45 asdiscussed in conjunction with FIG. 3. The I/O circuit 63 is responsiveto a column select signal (CSEL) and is operable to connect thedigitlines D0 and D0* to the input/output lines I/O and I/O*,respectively. It should be apparent to one skilled in the art that otherperipheral devices may be used while remaining within the scope of thepresent invention and that each digitline pair may include its own groupof peripheral devices 46.

FIG. 5A is a schematic of an column decoder circuit 23 according to oneembodiment. The column decoder circuit 23 is operable to produce one ormore column select signals (CSEL), for example, used by the I/O circuits63 of FIG. 4. As illustrated in FIG. 5A, the column decoder circuit 23is operable to produce column select signals CSEL<0> (which in thecurrent embodiment may be used to activate the I/O circuit 63 fordigitline pair D0–D0*) and CSEL<1> (which in the current embodiment maybe used to activate the I/O circuit for digitline pair D1–D1*).

In the current embodiment, the decoder circuit 23 is employed togenerate a column select signal which is used for selecting a storagelocation (e.g., a mbit) in a memory device. It should be apparent to oneskilled in the art, however, that the decoder circuit 23 may be used forapplications other than for producing a column select signal. Thecurrent embodiment is in no way intended to limit the scope of thepresent invention.

In the current embodiment, the column decoder circuit 23 is responsiveto predecoded signals CA012 i<0>, CA345<0>, CA67E<0>, and CA67E<1>.Specifically, CA345<0> is fed to gates of transistors M1 and M2 andCA012 i<0> is fed to the source of transistor M1. The drains oftransistors M1 and M2 are connected to the source of transistor M3 andto the source of transistor M7. The pre-decoded address signal CA67E<0>is fed to the gate of transistor M3 and the pre-decoded address signalCA67E<1> is fed to the gate of transistor M7.

The drain of transistor M3 is connected to node 51 a, which is alsoconnected to the input of inverter 54, to the source of transistor M4,and to the drains of transistors M5 and M6. The output of inverter 54 isconnected to node 52 a, which is also connected to the input of inverter55 and to the gates of transistors M5 and M6. The source of transistorM6 is connected to Vcc. The source of transistor M5, which carries theprecharge signal, is connected to the drain of transistor M4. The outputof inverter 55 is connected to node 53 a, which is also connected to theinput of inverter 56 and is fed back to the gate of transistor M4. Theoutput of inverter 56 provides the signal CSEL<0>. In the currentembodiment, transistor M6 may be a very weak device (e.g., has a smallchannel) such that it may easily be overridden when transistor M3 isturned on.

The drain of transistor M7 is connected to node 51 b, which is alsoconnected to the input of inverter 57, to the source of transistor M8,and to the drains of transistors M9 and M10. The output of inverter 57is connected to node 52 b, which is also connected to the input ofinverter 58 and to the gates of transistors M9 and M10. The source oftransistor M10 is connected to Vcc. The source of transistor M9, whichcarries the precharge signal, is connected to the drain of transistorM8. The output of inverter 58 is connected to node 53 b, which is alsoconnected to the input of inverter 59 and is fed back to the gate oftransistor M8. The output of inverter 59 provides the signal CSEL<1>. Inthe current embodiment, transistor M10 may be a very weak device (e.g.,has a small channel) such that it may easily be overridden whentransistor M7 turns on.

Referring to FIG. 5A, it should be apparent to one skilled in the artthat the predecoded signals CA67E<0> and CA67E<1> act as enablingsignals for CSEL<0> and CSEL<1>, respectively. It should further beapparent to one skilled in the art that transistors M4, M5 andtransistors M8, M9 are enabled (and thus the precharge signal isapplied) only when the column select lines CSEL<0> and CSEL<1>,respectively, are already on.

Referring to the CSEL<0> portion of column decoder circuit 23 forexample, assume that CSEL<0> is low. Then, node 51 a is high, node 52 ais low, and node 53 a is high. In this case, transistor M4 is disabled(i.e., because node 53 a is high), transistor M5 is disabled, andtransistor M6 is enabled (i.e., because node 52 a is low). Thus, node 51a is latched at Vcc by transistor M6 and the precharge signal is notapplied to node 51 a. As discussed above, transistor M6 may be a veryweak device such that it may easily be overridden when transistor M3turns on.

In contrast, assume that CSEL<0> is high. Then, node 51 a is low, node52 a is high, and node 53 a is low. In this case, transistor M4 isenabled (i.e., because node 53 a is low), transistor M5 is enabled, andtransistor M6 is disabled (i.e., because node 52 a is high). Theprecharge signal is applied to node 51 a through transistors M4 and M5.Accordingly, the precharge signal (PRE) can only precharge a columnselect line that is currently turned on. Thus, any overlap between ofthe precharge signals (PRE) and the enable signal CA67E<0> does noteffect the turn on time of the column decoder 23 and does not effect thepercent of the cycle time that the decode is on.

FIG. 5B is a schematic of a redundant column decoder circuit 72according to one embodiment. The redundant column decoder circuit 72functions in a similar manner as that of the column decoder 23. In thecurrent embodiment, the redundant column decoder circuit 72 isresponsive to the MATCH signal and the redundant column select signalRCSE<0>. It should be apparent to one skilled in the art that theredundant column select signal RCSE<0> acts as enabling signal forRCS<0>.

FIG. 6A is a simplified schematic of a column address circuit 70incorporating one or more column decoder circuits 23 of FIG. 5A and/orone or more redundant column decoder circuits of FIG. 5B according toone embodiment. The column addressing circuit 70 includes a row/columnmultiplexer & address trap 73, a redundancy compare circuit 74, a columndecoder 23, a redundant column decoder 72, address pre-decode circuits75, and a command decode control circuit 76. The row/column multiplexer& address trap 73 receives a command decode signal from the commanddecode control circuit 76 and address signals (for example, addresssignals A<0:7> from address bus 16). The row/column multiplexer &address trap 73 outputs one or more column address signals (e.g.,CA<0:7>). The column address signals are supplied to redundancy comparecircuit 74 and to the address pre-decode circuits 75.

The address pre-decode circuit 75 uses column address signals CA<0:2>,CA<3:5>, and CA<6:7> to produce pre-decoded address signals CA67E<0:7>,CA345<0:7>, and CA012 i<0:7> which are input into the column decoder 23.The column decoder 23 produces column select signals CS<0:255>.

FIG. 6B is a table illustrating an address pre-decode scheme for columnaddress signals according to one embodiment. More specifically, thetable in FIG. 6B illustrates an address pre-decode scheme for the columnaddress signal CA<3:5>. For example in the current embodiment, whenCA<3:5> is equal to 000 (i.e., column address bits 5, 4, and 3 are atstates 0, 0, and 0, respectively), the address pre-decoder circuit 75outputs pre-decoded address signals CA345<7>=0, CA345<6>=0, CA345<5>=0,CA345<4>=0, CA345<3>=0, CA345<2>=0, CA345<1>=0, CA345<0>=1 (i.e., bits 7through 0 are at states 0, 0,0, 0, 0, 0, 0, and 1, respectively). As afurther example, when CA<3:5> is equal to 001 (i.e., column address bits5, 4, and 3 are at states 0, 0, and 1, respectively), the addresspre-decoder circuit 75 outputs pre-decoded address signals CA345<7>=0,CA345<6>=0, CA345<5>=0, CA345<4>=0, CA345<3>=0, CA345<2>=0, CA345<1>=1,CA345<0>=0 (i.e., bits 7 through 0 are at states 0, 0, 0, 0, 0, 0, 1,and 0, respectively), etc. It should be apparent to one skilled in theart that other address pre-decode schemes may be used while remainingwithin the scope of the present invention.

Returning to FIG. 6A, the column address signals (CA<0:7>) are alsosupplied to redundancy compare circuit 74. The redundancy comparecircuit 74 produces one or more redundancy column select enable signals(e.g., RCSE<0:3>) and a MATCH signal. The redundancy column selectenable signals and the MATCH signal are supplied to one or moreredundant column decoders 72. The redundant column decoders 72 produceredundant column select signals (e.g., RCS <0:3>). Typically, a singleredundant column decoder 72 or column decoder 23 is enabled for aspecific address. However, it should be apparent to one skilled in theart that multiple redundant column decoders 72 and/or column decoders 23may be simultaneously activated for multiple addresses (i.e., oneredundant column decoder 72 or one column decoder 23 for each of themultiple addresses).

The MATCH signal is also supplied, with the enable signal EN, to a NORgate 71. The output of the NOR gate 71 is sent to each of the addresspre-decode circuit 75 to deactivate the address pre-decode circuits whenthe supplied address corresponds to a defective address.

FIGS. 6C–6E illustrate exemplary internal components of the redundancycompare circuit 74 as shown in FIG. 6A according to one embodiment. Asillustrated in FIG. 6C, each column address signal (e.g., CA<0:7>) isinput into an exclusive-NOR gate with a fuse signal (e.g., Fuse<0:7>).Fused circuits may be used to produce the fuse signal. The fusedcircuits may be pre-programmed to indicate a defective address. A firstgroup of output signals from the exclusive-NOR gates (i.e., LM<0:3>) areinput into a first NAND gate 86, whereas a second group of outputsignals from the exclusive NOR-gates (i.e., LM<4:7>) are input into asecond NAND gate 87. The output of the first NAND gate 86 and the secondNAND gate 87 are input into a NOR gate 88, the output of which is aredundancy match signal (e.g., Rmatch<0>).

Several redundancy match signals may be combined to produce the MATCHsignal. Referring to FIG. 6D, for example, the redundancy match signalsRmatch<0> through Rmatch<3> are combined by circuit 78 to produce theMATCH signal in one embodiment.

A redundant match signal may also be combined with the enable signal ENto produce the redundant column select enable signal (e.g., RCSE<0:3>).Referring to FIG. 6E, for example, the redundant match signal Rmatch<0>is combined with the enable signal EN by circuit 79 to produce theredundant column select enable signal RCSE<0> in one embodiment.

FIG. 7 illustrates a timing diagram for the column address circuit 70 ofFIG. 6A according to one embodiment. The timing diagram of FIG. 7 showstwo (2) read cycles; the first beginning at t₁, the second beginning att₃. Referring now to the first read cycle (i.e., beginning at t₁), theclock signal goes active and the row/column mux and address trap 73“traps” both a read command (i.e., present on the command decode line)and addresses (i.e., present on the address input, e.g., A<0:7>). Therow/column mux and address trap 73 drives column addresses (i.e.,CA<0:2>, CA<3:5>, and CA<6:7>) to the address pre-decode circuit 75 andto the redundancy compare circuit 74. The address pre-decode circuit 75drives the pre-decoded signal CA345<0:7> to the column decoder 23.

The redundancy compare circuit 74 compares the column addresses topreprogrammed addresses representing the defective addresses in thearray. If the column select corresponds to a specific column addressthat is defective, the redundancy compare circuit 74 finds a match. Theredundancy compare circuit will then produce a redundant columnaddresses (RCSE<0:3>) and a MATCH signal. The MATCH signal acts as anenable signal for the redundant column decoder 72 (which produces theredundant column select signals RCS<0:3>) and disables the appropriateaddress pre-decode circuits 75. If the redundancy compare circuit 74does not find a match, then the normal column select enable (EN) signalfires and the address pre-decode circuit 75 drives the pre-decodedaddresses (i.e., CA012 i<0:7>, CA345<0:7>, and CA67E<0:7>) to the columndecoder 23.

As illustrated in FIG. 7, the redundancy compare circuit 74 is shown asnot finding a match. A dotted MATCH signal, however, is shown toillustrate that enable signal EN fires at the same time that the MATCHsignal would have fired had the address been defective.

The MATCH and EN signals cause the pre-decode signals CA67E<0:7> and thecolumn select signal CS0 i to go active. Then, the bank address signal(B0), the address signal A0 i, and the column select signal CSEL<0> eachgo active. The precharge signal (PRE) shuts off the column select signalCSEL<0> at the end of a cycle (as illustrated in FIG. 7, the read cycleuses two clock pulses).

It should be noted that the sloped lines in FIG. 7 are used toillustrate that the corresponding signals can be skewed so as to havefast turn-on times and slow turn-off times (e.g., to improve speed overstatic decoders that must match turn-on/turn-off times). Additionally,it should be noted that the column array circuit 70 uses four (4)redundant elements. The MATCH signal fires if any of the four redundancycompare circuits finds a match. It should be apparent to one skilled inthe art that the redundant column select signal (e.g., RCSE<0>) isactivated instead of a column enable signal (e.g., CA67E<0>) when amatch is found by the redundancy compare circuit 74.

It should be recognized that the above-described embodiments of theinvention are intended to be illustrative only. Numerous alternativeembodiments may be devised by those skilled in the art without departingfrom the scope of the following claims. For example, the scope of thepresent invention may extend to other types of circuits and should notbe limited solely to column address decoders.

1. A method for selecting a storage location in a memory device, comprising: receiving at least one of a pre-decoded location address signal, a match signal, and a redundant location address enable signal; enabling at least one of a decoder and a redundant decoder in response to said match signal, wherein said decoder is operable to generate a location select signal for selecting a first location, said decoder being responsive to said pre-decoded location address signal, and wherein said redundant decoder is operable to generate a redundant location select signal for selecting a second location, said redundant decoder being responsive to said redundant location address enable signal; and terminating one of said location select signal and said redundant location select signal in response to a precharge signal.
 2. The method of claim 1 further comprising: receiving a location address signal for identifying said storage location in said memory device; and generating said match signal wherein said match signal is indicative of whether said location address signal corresponds to a defective storage location.
 3. The method of claim 1 further comprising: receiving a location address signal for identifying said storage location in said memory device; and converting said location address signal into said pre-decoded location address signal.
 4. The method of claim 1 further comprising: capturing an address signal; and converting said address signal into said location address signal.
 5. The method of claim 1 further comprising maintaining said precharge signal in an inactive state while said decoder and said redundant decoder are disabled.
 6. A method for selecting a storage location in a memory device, comprising: enabling a decoder in response to at least one of an address signal and a match signal; generating a location select signal with said enabled decoder; and terminating said location select signal in response to said address signal and a precharge signal.
 7. The method of claim 6 further comprising: enabling a redundant decoder in response to at least one of said address signal and said match signal; generating a redundant location select signal with said enabled redundant decoder; and terminating said redundant location select signal in response to said address signal and said precharge signal.
 8. The method of claim 7 wherein said enabling a redundant decoder is instituted if said match signal indicates that said address signal identifies a defective storage location in said memory device and wherein said enabling a decoder is instituted if said match signal indicates that said address signal identifies a functioning storage location in said memory device.
 9. A method for accessing a memory location, comprising: enabling at least one of a decoder circuit and a redundant decoder circuit in response to at least one of a pre-decoded address signal, a redundant column select enable signal, and a match signal; generating one of a column select signal with said enabled decoder circuit and a redundant column select signal with said enabled redundant decoder circuit; and terminating said one of a column select signal and a redundant column select signal in response to a precharge signal and at least one of said pre-decoded address signal and said redundant column select enable signal.
 10. The method of claim 9 further comprising: receiving a column address; comparing said column address to a pre-programmed list of defective memory locations; and generating said match signal in response to said comparing.
 11. The method of claim 10 wherein said enabling a redundant decoder circuit is instituted if said match signal indicates that said column address identifies a defective memory location and wherein said enabling a decoder circuit is instituted if said match signal indicates that said column address identifies a functioning memory location.
 12. A decoder, comprising: an input for receiving a first signal; a first node connected to said input via an enabling device which is responsive to a second signal; a plurality of inverters for generating a location select signal in response to said first and second signals; and a feedback loop responsive to said location select signal, said feedback loop supplying at least one of a precharge signal and a latch signal to said first node.
 13. The decoder of claim 12 wherein said enabling device is a transistor gated by said second signal.
 14. The decoder of claim 12 wherein said plurality of inverters are series connected and include: a first inverter having its input connected to said first node and its output connected to a second node; a second inverter having its input connected to said second node and its output connected to a third node; and a third inverter having its input connected to said third node and its output carrying said location select signal.
 15. The decoder of claim 14 wherein said feedback loop includes: a first feedback transistor gated to said third node, said first feedback transistor operable to supply said precharge signal to said first node; a second feedback transistor gated to said second node, said second feedback transistor operable to supply said precharge signal to said first node; and a third feedback transistor gated to said second node, said third feedback transistor operable to supply said latch signal to said first node.
 16. The decoder of claim 15 wherein said third feedback transistor is sized to be overridden by said enabling device.
 17. A column address circuit for a memory device, comprising: a command decode circuit operable to generate at least one of an enable signal and a precharge signal; an address trap circuit responsive to said command decode circuit to convert an address signal into a column address signal; a redundancy compare circuit responsive to said command decode circuit and said address trap circuit to generate a match signal and a redundant column select enable signal; an address pre-decode circuit responsive to said command decode circuit, said address trap circuit, and said redundancy compare circuit to generate a pre-decoded column address signal in response to said column address signal; and a decoder circuit operable to generate at least one of a column select signal in response to said pre-decoded column address signal and a redundant column select signal in response to said redundant column select enable signal, said decoder circuit further responsive to said precharge signal to terminate said one of a column select signal and a redundant column select signal.
 18. The column address circuit of claim 17 wherein said decoder circuit comprises: an input for receiving a first portion of said pre-decoded column address signal; a first node connected to said input via an enabling device which is responsive to a second portion of said pre-decoded address signal; a plurality of inverters for generating said column select signal in response to said first and second portions of said pre-decoded address signal; and a feedback loop responsive to said column select signal, said feedback loop supplying at least one of a precharge signal and a latch signal to said first node.
 19. The column address circuit of claim 18 wherein said plurality of inverters are serially connected and include: a first inverter having its input connected to said first node and its output connected to a second node; a second inverter having its input connected to said second node and its output connected to a third node; and a third inverter having its input connected to said third node and its output carrying said column select signal.
 20. The column address circuit of claim 19 wherein said feedback loop includes: a first feedback transistor gated to said third node, said first feedback transistor operable to supply said precharge signal to said first node; a second feedback transistor gated to said second node, said second feedback transistor operable to supply said precharge signal to said first node; and a third feedback transistor gated to said second node, said third feedback transistor operable to supply said latch signal to said first node.
 21. The column address circuit of claim 17 wherein said redundant decoder circuit comprises: an input for receiving said match signal; a first node connected to said input via an enabling device which is responsive to said redundant column select enable signal; a plurality of inverters for generating said redundant column select signal in response to said match signal and said redundant column select enable signal; and a feedback loop responsive to said redundant column select signal, said feedback loop supplying at least one of a precharge signal and a latch signal to said first node.
 22. The column address circuit of claim 21 wherein said plurality of inverters are serially connected and include: a first inverter having its input connected to said first node and its output connected to a second node; a second inverter having its input connected to said second node and its output connected to a third node; and a third inverter having its input connected to said third node and its output carrying said redundant column select signal.
 23. The column address circuit of claim 22 wherein said feedback loop includes: a first feedback transistor gated to said third node, said first feedback transistor operable to supply said precharge signal to said first node; a second feedback transistor gated to said second node, said second feedback transistor operable to supply said precharge signal to said first node; and a third feedback transistor gated to said second node, said third feedback transistor operable to supply said latch signal to said first node.
 24. A memory device, comprising: a memory array having a plurality of memory cells, a plurality of wordlines and a plurality of digitlines, wherein said memory cells are accessible by said wordlines and said digitlines, and a plurality of peripheral devices for reading data out of and writing data into said memory array, said peripheral devices comprising: a digitline driver for activating at least one of said digitlines, said digitline driver responsive to a decoder output signal; and a decoder for providing said decoder output signal, said decoder comprising: an input for receiving a first signal; a first node connected to said input via an enabling device which is responsive to a second signal; a plurality of inverters for generating said decoder output signal in response to said first and second signals; and a feedback loop responsive to said decoder output signal, said feedback loop supplying at least one of a precharge signal and a latch signal to said first node.
 25. The memory device of claim 24 wherein said decoder's plurality of inverters are series connected and include: a first inverter having its input connected to said first node and its output connected to a second node; a second inverter having its input connected to said second node and its output connected to a third node; and a third inverter having its input connected to said third node and its output carrying said decoder output signal.
 26. The memory device of claim 25 wherein said decoder's feedback loop includes: a first feedback transistor gated to said third node, said first feedback transistor operable to supply said precharge signal to said first node; a second feedback transistor gated to said second node, said second feedback transistor operable to supply said precharge signal to said first node; and a third feedback transistor gated to said second node, said third feedback transistor operable to supply said latch signal to said first node.
 27. The memory device of claim 26 wherein said decoder's third feedback transistor is sized to be overridden by said decoder's enabling device.
 28. The memory device of claim 24 wherein said decoder output signal is one of a column select signal and a redundant column select signal. 